Posted: Monday, April 13, 2020

Dr. Harmon's article "Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs" appeared in the recent edition of the IEEE Transactions on Nuclear Science.
 

This research, in collaboration with the University of Iowa and Pennsylvania State University, introduces a model of a new magnetoresistance phenomena that arises due to electrons in semiconductors recombining through defects. The magnetoresistance originates from the spin-dependence (essentially the Pauli exclusion principle) of recombination (and is a variation of the Shockley Read Hall mechanism). This article has applications for electronic devices aboard spacecraft as the defects examined are produced by radiation similar to which is seen in space.

The abstract can be found at https://ieeexplore.ieee.org/abstract/document/9039723.

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