Posted: Friday, January 31, 2020

Nicholas Harmon, assistant professor of physics, published a paper entitled "Observation of Radiation Induced Leakage Current in MOS Oxides with Multi-Frequency Electrically Detected Magnetic Resonance and Near Zero Field Magnetoresistance" in the IEEE journal "Transactions on Nuclear Science".

The work, collaboration with Penn State, U of Iowa, and Intel, studied leakage currents in essentially transistors that had been damaged with radiation. Radiation produces defects which allows electrons to hop across a barrier and reduces the quality of the device. The research used a magnetic resonance technique (kind of like MRI) to study the defects. It also used a new technique called Near Zero Field Magnetoresistance.

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